TY - JOUR
T1 - Free-carrier absorption experiments for the investigation of the physical device properties in IGBTs with hydrogen-related donors
AU - Korzenietz, A.
AU - Wachutka, G.
AU - Hille, F.
AU - Sandow, C.
AU - Niedernostheide, F. J.
N1 - Publisher Copyright:
© 2017 IEEJ.
PY - 2017
Y1 - 2017
N2 - Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used, which had been adapted to the specific properties of the employed measurement set-up. Two different hydrogen-related donor profiles were implanted into these IGBT samples and, subsequently, measurements with different current densities were compared to 2D TCAD numerical simulations. In the next step, the simulation models were adjusted, with respect to carrier lifetime and mobility to reflect the impact of a possible variation of these properties.
AB - Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used, which had been adapted to the specific properties of the employed measurement set-up. Two different hydrogen-related donor profiles were implanted into these IGBT samples and, subsequently, measurements with different current densities were compared to 2D TCAD numerical simulations. In the next step, the simulation models were adjusted, with respect to carrier lifetime and mobility to reflect the impact of a possible variation of these properties.
KW - Carrier Lifetime
KW - Carrier Mobility
KW - Free Carrier Absorption Measurements
KW - IGBT
KW - Proton Induced Donors
UR - http://www.scopus.com/inward/record.url?scp=85028516441&partnerID=8YFLogxK
U2 - 10.23919/ISPSD.2017.7988936
DO - 10.23919/ISPSD.2017.7988936
M3 - Conference article
AN - SCOPUS:85028516441
SN - 1063-6854
SP - 163
EP - 166
JO - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
JF - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
M1 - 7988936
T2 - 29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017
Y2 - 28 May 2017 through 1 June 2017
ER -