Abstract
We present a statistical evaluation of the low frequency noise behavior of MOSFETs. Amplitude and frequency of the l/f-noise of small area devices show fluctuations by more than an order of magnitude. The noise fluctuations are particularly high for analog operating conditions. They are explained by considering statistical effects of trap number and efficiency. A bias and area dependent worst case description of the noise behavior is given which can easily be included into standard circuit simulation models (e.g. BSIM3).
| Original language | English |
|---|---|
| Pages (from-to) | 159-162 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1999 |
| Externally published | Yes |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999 |