Abstract
A Si Schottky diode sampling circuit for demultiplexer was presented using flip-chip technology on alumina substrate. Very high speed Si Schottky diodes, with cutoff frequency of 750 GHz, were modeled using the Root diode model. Flip-chip interconnection was simulated using three dimensional electromagnetic simulator, HFSS. The measurements and the simulation results for the sampling circuit showed good agreement up to 40 GHz.
Original language | English |
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Pages (from-to) | 1515-1518 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 3 |
State | Published - 2003 |
Event | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 8 Jun 2003 → 13 Jun 2003 |