Flip-chip bonded Si Schottky diode sampling circuits for high speed demultiplexers

Jung Han Choi, Claus Joerg Weiske, Gerhard R. Olbrich, Peter Russer

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

A Si Schottky diode sampling circuit for demultiplexer was presented using flip-chip technology on alumina substrate. Very high speed Si Schottky diodes, with cutoff frequency of 750 GHz, were modeled using the Root diode model. Flip-chip interconnection was simulated using three dimensional electromagnetic simulator, HFSS. The measurements and the simulation results for the sampling circuit showed good agreement up to 40 GHz.

Original languageEnglish
Pages (from-to)1515-1518
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
StatePublished - 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: 8 Jun 200313 Jun 2003

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