Abstract
The Mn-Ga complexes of the general formula {L(CO)4Mn} a[GaR3-a(Do)] (L=CO, R=alkyl; Do=N-Lewis-donor) are obtained in yields ≥90% and used as volatile single source precursors for the gas-phase deposition of thin Mn-Ga alloy films.
| Original language | English |
|---|---|
| Pages (from-to) | 337-338 |
| Number of pages | 2 |
| Journal | Journal of the Chemical Society, Chemical Communications |
| Issue number | 3 |
| DOIs | |
| State | Published - 1995 |