First volatile alkylgallyl manganese complexes; structure of [(CO 5)Mn]2Ga[(CH2)3NMe2]. Molecular control of the stoichiometry of Mn-Ga thin films grown by low-pressure MOCVD

Roland A. Fischer, Alexander Miehr, Markus M. Schulte, Eberhardt Herdtweck

Research output: Contribution to journalArticlepeer-review

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Abstract

The Mn-Ga complexes of the general formula {L(CO)4Mn} a[GaR3-a(Do)] (L=CO, R=alkyl; Do=N-Lewis-donor) are obtained in yields ≥90% and used as volatile single source precursors for the gas-phase deposition of thin Mn-Ga alloy films.

Original languageEnglish
Pages (from-to)337-338
Number of pages2
JournalJournal of the Chemical Society, Chemical Communications
Issue number3
DOIs
StatePublished - 1995

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