TY - JOUR
T1 - First monomeric, volatile bis-azide single-source precursor to gallium nitride thin films
AU - Miehr, Alexander
AU - Ambacher, Oliver
AU - Rieger, Walter
AU - Metzger, Thomas
AU - Born, Eberhard
AU - Fischer, Roland A.
PY - 1996
Y1 - 1996
N2 - Group III nitrides are strong candidates for use in light emitting diodes and semiconductor lasers. There are, though, a number of shortcoming of currently available precursors. There is a need for less toxic and pyrophoric precursors that can be used for low temperature deposition. Fortunately, the single source nitrogen-rich GaN precursor, building on the concept of intramolecularly based adduct stabilization, shows considerable promise for producing high quality layers.
AB - Group III nitrides are strong candidates for use in light emitting diodes and semiconductor lasers. There are, though, a number of shortcoming of currently available precursors. There is a need for less toxic and pyrophoric precursors that can be used for low temperature deposition. Fortunately, the single source nitrogen-rich GaN precursor, building on the concept of intramolecularly based adduct stabilization, shows considerable promise for producing high quality layers.
UR - http://www.scopus.com/inward/record.url?scp=0030106052&partnerID=8YFLogxK
U2 - 10.1002/cvde.19960020206
DO - 10.1002/cvde.19960020206
M3 - Article
AN - SCOPUS:0030106052
SN - 0948-1907
VL - 2
SP - 51
EP - 55
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
IS - 2
ER -