First monomeric, volatile bis-azide single-source precursor to gallium nitride thin films

Alexander Miehr, Oliver Ambacher, Walter Rieger, Thomas Metzger, Eberhard Born, Roland A. Fischer

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

Group III nitrides are strong candidates for use in light emitting diodes and semiconductor lasers. There are, though, a number of shortcoming of currently available precursors. There is a need for less toxic and pyrophoric precursors that can be used for low temperature deposition. Fortunately, the single source nitrogen-rich GaN precursor, building on the concept of intramolecularly based adduct stabilization, shows considerable promise for producing high quality layers.

Original languageEnglish
Pages (from-to)51-55
Number of pages5
JournalChemical Vapor Deposition
Volume2
Issue number2
DOIs
StatePublished - 1996

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