Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots

J. J. Finley, D. J. Mowbray, M. S. Skolnick, A. D. Ashmore, C. Baker, A. F.G. Monte, M. Hopkinson

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Abstract

Photoluminescence spectra from single self-assembled InAs quantum dots embedded in an Al0.6Ga0.4As matrix are reported. The spectra consist of a higher-energy linearly polarized doublet, with large splitting of the order of 1 meV, and a lower-energy unpolarized line. The polarized lines are explained in terms of exciton recombination at asymmetric dots, with the splitting due to the anisotropic exchange interaction. The lower-energy unsplit, unpolarized line is ascribed to recombination at the same dots but in the presence of an excess charge, which results in zero net electron spin and hence quenching of the exchange interaction. The conclusions are fully supported by magneto-optical investigations.

Original languageEnglish
Article number153316
Pages (from-to)1533161-1533164
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number15
StatePublished - 15 Oct 2002
Externally publishedYes

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