Abstract
This paper present a rigorous field theory analysis of the distributed microwave effects in high speed semiconductor lasers by using a combination of a self-consistent complex finite difference method with the frequency-domain TLM method (FDTLM). The semiconductor laser is treated as a lossy multilayer slow-wave microstrip transmission line. The conductivity profile in the active layer is obtained by a self-consistent solution of the nonlinear semiconductor device equations. The attenuation factor, phase velocity and characteristics impedance of the semiconductor laser is presented for the unbiased and forward-biased case and compared with experimental results. On the basis of this analysis we present the interconnection effects between passive microwave transmission lines and laser diodes using airbridge or flip-chip transitions.
| Original language | English |
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| Pages (from-to) | 861-864 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 2 |
| State | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Orlando, FL, USA Duration: 16 May 1995 → 20 May 1995 |