Field-effect induced electron channels in a Si/Si0.7Ge 0.3 heterostructure

M. Holzmann; D. Többen; G. Abstreiter; F. Schäffler

doi:10.1063/1.357401

Field-effect induced electron channels in a Si/Si_0.7Ge _0.3 heterostructure

M. Holzmann
, D. Többen
, G. Abstreiter
, F. Schäffler

TUM Emeriti of Excellence

Walter Schottky Institut
Daimler-Benz AG

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Size effects in field-effect induced wires imposed upon a high-mobility Si/Si_0.7Ge_0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.

Original language	English
Pages (from-to)	3917-3919
Number of pages	3
Journal	Journal of Applied Physics
Volume	76
Issue number	6
DOIs	https://doi.org/10.1063/1.357401
State	Published - 1994

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title = "Field-effect induced electron channels in a Si/Si0.7Ge 0.3 heterostructure",

abstract = "Size effects in field-effect induced wires imposed upon a high-mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.",

author = "M. Holzmann and D. T{\"o}bben and G. Abstreiter and F. Sch{\"a}ffler",

year = "1994",

doi = "10.1063/1.357401",

language = "English",

volume = "76",

pages = "3917--3919",

journal = "Journal of Applied Physics",

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T1 - Field-effect induced electron channels in a Si/Si0.7Ge 0.3 heterostructure

AU - Holzmann, M.

AU - Többen, D.

AU - Abstreiter, G.

AU - Schäffler, F.

PY - 1994

Y1 - 1994

N2 - Size effects in field-effect induced wires imposed upon a high-mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.

AB - Size effects in field-effect induced wires imposed upon a high-mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.

UR - https://www.scopus.com/pages/publications/0040097343

U2 - 10.1063/1.357401

DO - 10.1063/1.357401

M3 - Article

AN - SCOPUS:0040097343

SN - 0021-8979

VL - 76

SP - 3917

EP - 3919

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Field-effect induced electron channels in a Si/Si_0.7Ge _0.3 heterostructure

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