Field-effect induced electron channels in a Si/Si0.7Ge 0.3 heterostructure

M. Holzmann; D. Többen; G. Abstreiter; F. Schäffler

doi:10.1063/1.357401

Field-effect induced electron channels in a Si/Si_0.7Ge _0.3 heterostructure

M. Holzmann, D. Többen, G. Abstreiter, F. Schäffler

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Size effects in field-effect induced wires imposed upon a high-mobility Si/Si_0.7Ge_0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.

Original language	English
Pages (from-to)	3917-3919
Number of pages	3
Journal	Journal of Applied Physics
Volume	76
Issue number	6
DOIs	https://doi.org/10.1063/1.357401
State	Published - 1994

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abstract = "Size effects in field-effect induced wires imposed upon a high-mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.",

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AU - Holzmann, M.

AU - Többen, D.

AU - Abstreiter, G.

AU - Schäffler, F.

PY - 1994

Y1 - 1994

N2 - Size effects in field-effect induced wires imposed upon a high-mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.

AB - Size effects in field-effect induced wires imposed upon a high-mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Field-effect induced electron channels in a Si/Si_0.7Ge _0.3 heterostructure

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