Ferromagnetic Ge(Mn) nanostructures

S. Ahlers, D. Bougeard, H. Riedl, G. Abstreiter, A. Trampert, W. Kipferl, M. Sperl, A. Bergmaier, G. Dollinger

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We present structural, magnetic and transport properties of Mn-doped Ge layers grown by molecular beam epitaxy (MBE) at low substrate temperatures TS. Atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM) analysis of structures grown at TS = 70 {ring operator} C and 120 {ring operator} C reveal defect-free epitaxy of Ge(Mn) on Ge(0 0 1) substrates. Despite the low TS we observe the formation of round shaped clusters with a diameter of 15-20 nm which are incoherent with the Ge matrix in TEM analysis for a Mn concentration x of 3.4%. SQUID measurements reveal ferromagnetism and a TC of around 300 {ring operator} C for the layers, reminiscent of the intermetallic compound Mn5 Ge3. Transport measurements, however, indicate that Mn is incorporated into the Ge matrix between the Mn5 Ge3 clusters as well.

Original languageEnglish
Pages (from-to)422-425
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2 SPEC. ISS.
DOIs
StatePublished - May 2006

Keywords

  • DMS
  • Ferromagnetic semiconductor
  • Ge
  • GeMn
  • Germanium
  • Manganese
  • Mn
  • Mn Ge

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