Femtosecond kinetics of freely relaxing non-fermi carrier distributions in GaAs

A. Leitenstorfer; C. Fürst; A. Laubereau

doi:10.1007/978-3-642-80314-7_177

Femtosecond kinetics of freely relaxing non-fermi carrier distributions in GaAs

A. Leitenstorfer, C. Fürst, A. Laubereau

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Technical University of Munich

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Abstract

The first energy and time resolved femtosecond study at low excitation densities (N = 10¹⁴-10¹⁷cm^-3) is presented. Carrier-carrier and carrier-phonon interactions are separately observed.

Original language	English
Pages (from-to)	406-407
Number of pages	2
Journal	Springer Series in Chemical Physics
Volume	62
DOIs	https://doi.org/10.1007/978-3-642-80314-7_177
State	Published - 1996

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title = "Femtosecond kinetics of freely relaxing non-fermi carrier distributions in GaAs",

abstract = "The first energy and time resolved femtosecond study at low excitation densities (N = 1014-1017cm-3) is presented. Carrier-carrier and carrier-phonon interactions are separately observed.",

author = "A. Leitenstorfer and C. F{\"u}rst and A. Laubereau",

year = "1996",

doi = "10.1007/978-3-642-80314-7_177",

language = "English",

volume = "62",

pages = "406--407",

journal = "Springer Series in Chemical Physics",

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T1 - Femtosecond kinetics of freely relaxing non-fermi carrier distributions in GaAs

AU - Leitenstorfer, A.

AU - Fürst, C.

AU - Laubereau, A.

PY - 1996

Y1 - 1996

N2 - The first energy and time resolved femtosecond study at low excitation densities (N = 1014-1017cm-3) is presented. Carrier-carrier and carrier-phonon interactions are separately observed.

AB - The first energy and time resolved femtosecond study at low excitation densities (N = 1014-1017cm-3) is presented. Carrier-carrier and carrier-phonon interactions are separately observed.

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DO - 10.1007/978-3-642-80314-7_177

M3 - Article

AN - SCOPUS:2842555831

SN - 0172-6218

VL - 62

SP - 406

EP - 407

JO - Springer Series in Chemical Physics

JF - Springer Series in Chemical Physics

ER -

Femtosecond kinetics of freely relaxing non-fermi carrier distributions in GaAs

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