Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells

R. A. Kaindl; M. Woerner; M. Wurm; K. Reimann; T. Elsaesser; C. Miesner; K. Brunner; G. Abstreiter

doi:10.1016/S0921-4526(01)01440-5

Femtosecond intersubband scattering of holes in Si_1-xGe_x/Si quantum wells

R. A. Kaindl
, M. Woerner
, M. Wurm
, K. Reimann
, T. Elsaesser
, C. Miesner
, K. Brunner
, G. Abstreiter

Natural Sciences

Max Born Institute
Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The intersubband relaxation of holes in p-type modulation-doped Si_1-xGe_x/Si multiple quantum wells is studied both experimentally and theoretically. Pump-probe experiments with 150-fs midinfrared pulses yield a lifetime of holes in the second heavy-hole subband of only 250 fs for 4.4-nm wide wells with x = 0.5. This short lifetime is caused by interaction with phonons via the optical deformation potential. Calculations of hole-phonon scattering agree very well with the experimental results. The calculations show that longer heavy-hole lifetimes are possible by increasing the Ge content and the well widths.

Original language	English
Pages (from-to)	255-258
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01440-5
State	Published - Mar 2002

Keywords

Intersubband relaxation
Optical deformation potential
SiGe quantum wells

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10.1016/S0921-4526(01)01440-5

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title = "Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells",

abstract = "The intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells is studied both experimentally and theoretically. Pump-probe experiments with 150-fs midinfrared pulses yield a lifetime of holes in the second heavy-hole subband of only 250 fs for 4.4-nm wide wells with x = 0.5. This short lifetime is caused by interaction with phonons via the optical deformation potential. Calculations of hole-phonon scattering agree very well with the experimental results. The calculations show that longer heavy-hole lifetimes are possible by increasing the Ge content and the well widths.",

keywords = "Intersubband relaxation, Optical deformation potential, SiGe quantum wells",

author = "Kaindl, \{R. A.\} and M. Woerner and M. Wurm and K. Reimann and T. Elsaesser and C. Miesner and K. Brunner and G. Abstreiter",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01440-5",

language = "English",

volume = "314",

pages = "255--258",

journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells

AU - Kaindl, R. A.

AU - Woerner, M.

AU - Wurm, M.

AU - Reimann, K.

AU - Elsaesser, T.

AU - Miesner, C.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 2002/3

Y1 - 2002/3

N2 - The intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells is studied both experimentally and theoretically. Pump-probe experiments with 150-fs midinfrared pulses yield a lifetime of holes in the second heavy-hole subband of only 250 fs for 4.4-nm wide wells with x = 0.5. This short lifetime is caused by interaction with phonons via the optical deformation potential. Calculations of hole-phonon scattering agree very well with the experimental results. The calculations show that longer heavy-hole lifetimes are possible by increasing the Ge content and the well widths.

AB - The intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells is studied both experimentally and theoretically. Pump-probe experiments with 150-fs midinfrared pulses yield a lifetime of holes in the second heavy-hole subband of only 250 fs for 4.4-nm wide wells with x = 0.5. This short lifetime is caused by interaction with phonons via the optical deformation potential. Calculations of hole-phonon scattering agree very well with the experimental results. The calculations show that longer heavy-hole lifetimes are possible by increasing the Ge content and the well widths.

KW - Intersubband relaxation

KW - Optical deformation potential

KW - SiGe quantum wells

UR - https://www.scopus.com/pages/publications/0036503510

U2 - 10.1016/S0921-4526(01)01440-5

DO - 10.1016/S0921-4526(01)01440-5

M3 - Article

AN - SCOPUS:0036503510

SN - 0921-4526

VL - 314

SP - 255

EP - 258

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Femtosecond intersubband scattering of holes in Si_1-xGe_x/Si quantum wells

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Keywords

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