TY - GEN
T1 - FeFET and NCFET for Future Neural Networks
T2 - 2021 Design, Automation and Test in Europe Conference and Exhibition, DATE 2021
AU - Yayla, Mikail
AU - Chen, Kuan Hsun
AU - Zervakis, Georgios
AU - Henkel, Jorg
AU - Chen, Jian Jia
AU - Amrouch, Hussam
N1 - Publisher Copyright:
© 2021 EDAA.
PY - 2021/2/1
Y1 - 2021/2/1
N2 - The goal of this special session paper is to introduce and discuss different emerging technologies for logic circuitry and memory as well as new lightweight architectures for neural networks. We demonstrate how the ever-increasing complexity in Artificial Intelligent (AI) applications, resulting in an immense increase in the computational power, necessitates inevitably employing innovations starting from the underlying devices all the way up to the architectures. Two different promising emerging technologies will be presented: (i) Negative Capacitance Field-Effect Transistor (NCFET) as a new beyond-CMOS technology with advantages for offering low power and/or higher accuracy for neural network inference. (ii) Ferroelectric FET (FeFET) as a novel non-volatile, area-efficient and ultra-low power memory device. In addition, we demonstrate how Binarized Neural Networks (BNNs) offer a promising alternative for traditional Deep Neural Networks (DNNs) due to its lightweight hardware implementation. Finally, we present the challenges from combining FeFET-based NVM with NNs and summarize our perspectives for future NNs and the vital role that emerging technologies may play.
AB - The goal of this special session paper is to introduce and discuss different emerging technologies for logic circuitry and memory as well as new lightweight architectures for neural networks. We demonstrate how the ever-increasing complexity in Artificial Intelligent (AI) applications, resulting in an immense increase in the computational power, necessitates inevitably employing innovations starting from the underlying devices all the way up to the architectures. Two different promising emerging technologies will be presented: (i) Negative Capacitance Field-Effect Transistor (NCFET) as a new beyond-CMOS technology with advantages for offering low power and/or higher accuracy for neural network inference. (ii) Ferroelectric FET (FeFET) as a novel non-volatile, area-efficient and ultra-low power memory device. In addition, we demonstrate how Binarized Neural Networks (BNNs) offer a promising alternative for traditional Deep Neural Networks (DNNs) due to its lightweight hardware implementation. Finally, we present the challenges from combining FeFET-based NVM with NNs and summarize our perspectives for future NNs and the vital role that emerging technologies may play.
UR - http://www.scopus.com/inward/record.url?scp=85111014487&partnerID=8YFLogxK
U2 - 10.23919/DATE51398.2021.9473978
DO - 10.23919/DATE51398.2021.9473978
M3 - Conference contribution
AN - SCOPUS:85111014487
T3 - Proceedings -Design, Automation and Test in Europe, DATE
SP - 300
EP - 305
BT - Proceedings of the 2021 Design, Automation and Test in Europe, DATE 2021
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 1 February 2021 through 5 February 2021
ER -