Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation

Stefan Drapatz; Thomas Fischer; Karl Hofmann; Ettore Amirante; Peter Huber; Martin Ostermayr; Georg Georgakos; Doris Schmitt-Landsiedel

doi:10.1109/ESSCIRC.2009.5325952

Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation

Stefan Drapatz, Thomas Fischer, Karl Hofmann, Ettore Amirante, Peter Huber, Martin Ostermayr, Georg Georgakos, Doris Schmitt-Landsiedel

Medicine and Health

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

This paper presents Read Margin analysis for large SRAM arrays with a fast test method that even can be realized in dual-V_DD product chips. Classical Static Noise Margin (SNM) is mostly suitable for single-cell simulation. Read Margin (RM) measurement allows analysis of large arrays and correlates to SNM, but requires a dedicated teststructure and long measurement time. The presented method analyzes the flipping of cells over varying supply voltage. The stability of large arrays can be characterized in read as well as in hold state depending on the state of the access transistors. Applying this method, the impact of Negative Bias Temperature Instability (NBTI) is demonstrated on both Read and Hold Margin in a 65 nm low power technology.

Original language	English
Title of host publication	ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference
Pages	92-95
Number of pages	4
DOIs	https://doi.org/10.1109/ESSCIRC.2009.5325952
State	Published - 2009
Event	35th European Solid-State Circuits Conference, ESSCIRC 2009 - Athens, Greece Duration: 14 Sep 2009 → 18 Sep 2009

Publication series

Name	ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Conference

Conference	35th European Solid-State Circuits Conference, ESSCIRC 2009
Country/Territory	Greece
City	Athens
Period	14/09/09 → 18/09/09

Access to Document

10.1109/ESSCIRC.2009.5325952

Cite this

Drapatz, S., Fischer, T., Hofmann, K., Amirante, E., Huber, P., Ostermayr, M., Georgakos, G., & Schmitt-Landsiedel, D. (2009). Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation. In ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference (pp. 92-95). Article 5325952 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2009.5325952

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title = "Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation",

abstract = "This paper presents Read Margin analysis for large SRAM arrays with a fast test method that even can be realized in dual-VDD product chips. Classical Static Noise Margin (SNM) is mostly suitable for single-cell simulation. Read Margin (RM) measurement allows analysis of large arrays and correlates to SNM, but requires a dedicated teststructure and long measurement time. The presented method analyzes the flipping of cells over varying supply voltage. The stability of large arrays can be characterized in read as well as in hold state depending on the state of the access transistors. Applying this method, the impact of Negative Bias Temperature Instability (NBTI) is demonstrated on both Read and Hold Margin in a 65 nm low power technology.",

author = "Stefan Drapatz and Thomas Fischer and Karl Hofmann and Ettore Amirante and Peter Huber and Martin Ostermayr and Georg Georgakos and Doris Schmitt-Landsiedel",

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note = "35th European Solid-State Circuits Conference, ESSCIRC 2009 ; Conference date: 14-09-2009 Through 18-09-2009",

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Drapatz, S, Fischer, T, Hofmann, K, Amirante, E, Huber, P, Ostermayr, M, Georgakos, G & Schmitt-Landsiedel, D 2009, Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation. in ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference., 5325952, ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference, pp. 92-95, 35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, 14/09/09. https://doi.org/10.1109/ESSCIRC.2009.5325952

Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation. / Drapatz, Stefan; Fischer, Thomas; Hofmann, Karl et al.
ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. p. 92-95 5325952 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Drapatz S, Fischer T, Hofmann K, Amirante E, Huber P, Ostermayr M et al. Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation. In ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. p. 92-95. 5325952. (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference). doi: 10.1109/ESSCIRC.2009.5325952

Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation

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