Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs heterostructures and quantum-wells

V. Roßkopf, P. Auer, E. Gornik, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report measurements of electronic excitations in the confinement regime between one and two dimensions. FIR transmission spectroscopy has been successfully used to detect two-dimensional plasmons dispersion, localized plasmons and depolarization shifted one-dimensional intersubband transitions. The far infrared response of arrays of periodic quantum wires has been investigated by cyclotron resonance transmission and photoconductivity (PC) measurements. Due to narrow geometrical dimensions (300 nm), quantum confinement arises and leads to the formation of one-dimensional electronic subbands with a typical energy separation of 1-3 meV in the case of the heterostructures, and up to 9 meV in the case of the quantum wells. The far infrared transmission spectra of the quantum wire structures show one strong resonance, which can be described by a harmonic oscillator model, assuming that the confining potential is of parabolic shape. Depending on the intensity of the bandgap illumination, a well pronounced transition from a one-dimensional electronic system behaviour to a modulated one-dimensional system and finally to a pure two-dimensional system can be achieved for the heterostructure samples. The position of the PC-peak can be assigned to the plasmon-shifted cyclotron resonance. In addition in the samples, which contain a low density (4 × 1010cm -2) and high mobility inversion channel, an extremely sharp line with a linewidth of 0.2 cm-1 can be observed, depending on the temperature and on the illumination of the samples.

Original languageEnglish
Pages (from-to)333-337
Number of pages5
JournalSolid-State Electronics
Volume40
Issue number1-8
DOIs
StatePublished - 1996

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