TY - GEN
T1 - Failure mechanism of power DMOS transistors under UIS stress conditions
AU - Icaza-Deckelmann, A.
AU - Wachutka, G.
AU - Krumrey, J.
AU - Hirler, F.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - The failure mechanism of multiple-cell power DMOS transistors under UIS stress conditions, where the device current is imposed by the external circuit, is investigated by means of electrothermal device simulation. The results suggest that the failure is caused by the concentration of the each cell's current in a bipolar transistor structure. In the simulation, a strong temperature rise precedes this pattern formation, within application-relevant current levels. Our analysis shows that the heat generated by the high current density may lead to an instability, and that subsequently the device current is likely to concentrate in one single cell of the device, producing eventual failure.
AB - The failure mechanism of multiple-cell power DMOS transistors under UIS stress conditions, where the device current is imposed by the external circuit, is investigated by means of electrothermal device simulation. The results suggest that the failure is caused by the concentration of the each cell's current in a bipolar transistor structure. In the simulation, a strong temperature rise precedes this pattern formation, within application-relevant current levels. Our analysis shows that the heat generated by the high current density may lead to an instability, and that subsequently the device current is likely to concentrate in one single cell of the device, producing eventual failure.
UR - https://www.scopus.com/pages/publications/84964310684
U2 - 10.1109/ASDAM.2002.1088541
DO - 10.1109/ASDAM.2002.1088541
M3 - Conference contribution
AN - SCOPUS:84964310684
T3 - ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems
SP - 349
EP - 352
BT - ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems
A2 - Donoval, Daniel
A2 - Breza, Juraj
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002
Y2 - 14 October 2002 through 16 October 2002
ER -