Fabrication of planar heterojunction perovskite solar cells by controlled low-pressure vapor annealing

A new method for achieving high efficiency planar CH₃NH₃I_3-xCl_x perovskite photovoltaics, based on a low pressure, reduced temperature vapor annealing is demonstrated. Heterojunction devices based on this hybrid halide perovskite exhibit a top PCE of 16.8%, reduced J-V hysteresis, and highly repeatable performance without need for a mesoporous or nanocrystalline metal oxide layer. Our findings demonstrate that large hysteresis is not an inherent feature of planar heterojunctions, and that efficient charge extraction can be achieved with uniform halide perovskite materials with desired composition. X-ray diffraction, valence band spectroscopy, and transient absorption measurements of these thin films reveal that structural modifications induced by chlorine clearly dominate over chemical and electronic doping effects, without affecting the Fermi level or photocarrier lifetime in the material. (Chemical Equation Presented).