Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

J. A. Garrido, C. E. Nebel, R. Todt, G. Rösel, M. C. Amann, M. Stutzmann, E. Snidero, P. Bergonzo

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

The fabrication of in-plane gate transistors was performed by using highly conductive surface layer induced in diamond by hydrogen termination. The insulating thin lines, obtained by using a combination of electron-beam lithography with surface oxidation were used for the separation of conductive channel from the Ohmic gate. Excellent blocking properties with leakage current of 0.3 pA/μm at 100 V and room temperature were shown by the oxidized lines of about 100 nm.

Original languageEnglish
Pages (from-to)988-990
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number6
DOIs
StatePublished - 10 Feb 2003

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