Abstract
Local Zn doping of n-modulation-doped GaAs/AlGaAs quantum well samples induced by absorption of a focused laser beam has been used to fabricate in-plane-gate transistor structures. Laser-induced thermal Zn diffusion from a highly doped SiO2 emulsion into the sample surface layers allows direct writing of lateral npn structures with sub-μm resolution. The p-doped lines form lateral potential barriers which are efficiently isolating the gate electrodes for large applied voltages at room temperature. Transistor structures with a 3-μm-wide electron channel in between V-shaped gates yield a transconductance of about 50 μS and are pinched-off at gate voltages U G≤-2.0 V.
Original language | English |
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Pages (from-to) | 592-594 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 64 |
Issue number | 5 |
DOIs | |
State | Published - 1994 |