Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain

D. S. Cao; A. Tandaechanurat; S. Nakayama; N. Hauke; T. Zabel; S. Ishida; S. Iwamoto; J. J. Finley; G. Abstreiter; Y. Arakawa

doi:10.1109/GROUP4.2011.6053758

Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain

D. S. Cao, A. Tandaechanurat, S. Nakayama, N. Hauke, T. Zabel, S. Ishida, S. Iwamoto, J. J. Finley, G. Abstreiter, Y. Arakawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We fabricated a silicon-based three-dimensional photonic crystal nanocavity by micromanipulation technique, exhibiting a high quality factor of ∼14,500. Lasing oscillation with an InAs/GaAs quantum-dot layer inserted in the cavity was successfully demonstrated at 11K.

Original language	English
Title of host publication	8th IEEE International Conference on Group IV Photonics, GFP 2011
Pages	187-189
Number of pages	3
DOIs	https://doi.org/10.1109/GROUP4.2011.6053758
State	Published - 2011
Event	8th IEEE International Conference on Group IV Photonics, GFP 2011 - London, United Kingdom Duration: 14 Sep 2011 → 16 Sep 2011

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
ISSN (Print)	1949-2081

Conference

Conference	8th IEEE International Conference on Group IV Photonics, GFP 2011
Country/Territory	United Kingdom
City	London
Period	14/09/11 → 16/09/11

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10.1109/GROUP4.2011.6053758

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Cao, D. S., Tandaechanurat, A., Nakayama, S., Hauke, N., Zabel, T., Ishida, S., Iwamoto, S., Finley, J. J., Abstreiter, G., & Arakawa, Y. (2011). Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain. In 8th IEEE International Conference on Group IV Photonics, GFP 2011 (pp. 187-189). Article 6053758 (IEEE International Conference on Group IV Photonics GFP). https://doi.org/10.1109/GROUP4.2011.6053758

@inproceedings{421942704b9348b19573d175f6899b37,

title = "Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain",

abstract = "We fabricated a silicon-based three-dimensional photonic crystal nanocavity by micromanipulation technique, exhibiting a high quality factor of ∼14,500. Lasing oscillation with an InAs/GaAs quantum-dot layer inserted in the cavity was successfully demonstrated at 11K.",

author = "Cao, {D. S.} and A. Tandaechanurat and S. Nakayama and N. Hauke and T. Zabel and S. Ishida and S. Iwamoto and Finley, {J. J.} and G. Abstreiter and Y. Arakawa",

year = "2011",

doi = "10.1109/GROUP4.2011.6053758",

language = "English",

isbn = "9781424483389",

series = "IEEE International Conference on Group IV Photonics GFP",

pages = "187--189",

booktitle = "8th IEEE International Conference on Group IV Photonics, GFP 2011",

note = "8th IEEE International Conference on Group IV Photonics, GFP 2011 ; Conference date: 14-09-2011 Through 16-09-2011",

}

Cao, DS, Tandaechanurat, A, Nakayama, S, Hauke, N, Zabel, T, Ishida, S, Iwamoto, S, Finley, JJ , Abstreiter, G & Arakawa, Y 2011, Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain. in 8th IEEE International Conference on Group IV Photonics, GFP 2011., 6053758, IEEE International Conference on Group IV Photonics GFP, pp. 187-189, 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, United Kingdom, 14/09/11. https://doi.org/10.1109/GROUP4.2011.6053758

Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain. / Cao, D. S.; Tandaechanurat, A.; Nakayama, S. et al.
8th IEEE International Conference on Group IV Photonics, GFP 2011. 2011. p. 187-189 6053758 (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain

AU - Cao, D. S.

AU - Tandaechanurat, A.

AU - Nakayama, S.

AU - Hauke, N.

AU - Zabel, T.

AU - Ishida, S.

AU - Iwamoto, S.

AU - Finley, J. J.

AU - Abstreiter, G.

AU - Arakawa, Y.

PY - 2011

Y1 - 2011

N2 - We fabricated a silicon-based three-dimensional photonic crystal nanocavity by micromanipulation technique, exhibiting a high quality factor of ∼14,500. Lasing oscillation with an InAs/GaAs quantum-dot layer inserted in the cavity was successfully demonstrated at 11K.

AB - We fabricated a silicon-based three-dimensional photonic crystal nanocavity by micromanipulation technique, exhibiting a high quality factor of ∼14,500. Lasing oscillation with an InAs/GaAs quantum-dot layer inserted in the cavity was successfully demonstrated at 11K.

UR - http://www.scopus.com/inward/record.url?scp=81355132396&partnerID=8YFLogxK

U2 - 10.1109/GROUP4.2011.6053758

DO - 10.1109/GROUP4.2011.6053758

M3 - Conference contribution

AN - SCOPUS:81355132396

SN - 9781424483389

T3 - IEEE International Conference on Group IV Photonics GFP

SP - 187

EP - 189

BT - 8th IEEE International Conference on Group IV Photonics, GFP 2011

T2 - 8th IEEE International Conference on Group IV Photonics, GFP 2011

Y2 - 14 September 2011 through 16 September 2011

ER -

Cao DS, Tandaechanurat A, Nakayama S, Hauke N, Zabel T, Ishida S et al. Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain. In 8th IEEE International Conference on Group IV Photonics, GFP 2011. 2011. p. 187-189. 6053758. (IEEE International Conference on Group IV Photonics GFP). doi: 10.1109/GROUP4.2011.6053758

Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain

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