Fabrication of double quantum dots by combining afm and e-beam lithography

M. C. Rogge; C. Fühner; U. F. Keyser; M. Bichler; G. Abstreiter; W. Wegscheider; R. J. Haug

doi:10.1016/j.physe.2003.11.054

Fabrication of double quantum dots by combining afm and e-beam lithography

M. C. Rogge
, C. Fühner
, U. F. Keyser
, M. Bichler
, G. Abstreiter
, W. Wegscheider
, R. J. Haug

Natural Sciences

Gottfried Wilhelm Leibniz Universität Hannover
Walter Schottky Institut
University of Regensburg

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

In recent years several attempts have been made to fabricate coupled quantum dots as a crucial element of quantum computing devices. One important challenge is to achieve a reliable control of the interdot tunneling. For this purpose we have combined direct nanolithography by local anodic oxidation (LAO) with standard electron-beam lithography. LAO is used to produce parallel double quantum dots. Additional metallic split gates are responsible for the control of the interdot coupling. We describe our fabrication scheme and demonstrate the function in low-temperature transport measurements.

Original language	English
Pages (from-to)	483-486
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.054
State	Published - Mar 2004
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 14 Jul 2003 → 18 Jul 2003

Keywords

Atomic force microscope
Coupled quantum dots
Electron-beam lithography
Local anodic oxidation

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10.1016/j.physe.2003.11.054

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title = "Fabrication of double quantum dots by combining afm and e-beam lithography",

abstract = "In recent years several attempts have been made to fabricate coupled quantum dots as a crucial element of quantum computing devices. One important challenge is to achieve a reliable control of the interdot tunneling. For this purpose we have combined direct nanolithography by local anodic oxidation (LAO) with standard electron-beam lithography. LAO is used to produce parallel double quantum dots. Additional metallic split gates are responsible for the control of the interdot coupling. We describe our fabrication scheme and demonstrate the function in low-temperature transport measurements.",

keywords = "Atomic force microscope, Coupled quantum dots, Electron-beam lithography, Local anodic oxidation",

author = "Rogge, \{M. C.\} and C. F{\"u}hner and Keyser, \{U. F.\} and M. Bichler and G. Abstreiter and W. Wegscheider and Haug, \{R. J.\}",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.054",

language = "English",

volume = "21",

pages = "483--486",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-4",

note = "Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

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TY - JOUR

T1 - Fabrication of double quantum dots by combining afm and e-beam lithography

AU - Rogge, M. C.

AU - Fühner, C.

AU - Keyser, U. F.

AU - Bichler, M.

AU - Abstreiter, G.

AU - Wegscheider, W.

AU - Haug, R. J.

PY - 2004/3

Y1 - 2004/3

N2 - In recent years several attempts have been made to fabricate coupled quantum dots as a crucial element of quantum computing devices. One important challenge is to achieve a reliable control of the interdot tunneling. For this purpose we have combined direct nanolithography by local anodic oxidation (LAO) with standard electron-beam lithography. LAO is used to produce parallel double quantum dots. Additional metallic split gates are responsible for the control of the interdot coupling. We describe our fabrication scheme and demonstrate the function in low-temperature transport measurements.

AB - In recent years several attempts have been made to fabricate coupled quantum dots as a crucial element of quantum computing devices. One important challenge is to achieve a reliable control of the interdot tunneling. For this purpose we have combined direct nanolithography by local anodic oxidation (LAO) with standard electron-beam lithography. LAO is used to produce parallel double quantum dots. Additional metallic split gates are responsible for the control of the interdot coupling. We describe our fabrication scheme and demonstrate the function in low-temperature transport measurements.

KW - Atomic force microscope

KW - Coupled quantum dots

KW - Electron-beam lithography

KW - Local anodic oxidation

UR - https://www.scopus.com/pages/publications/1642335137

U2 - 10.1016/j.physe.2003.11.054

DO - 10.1016/j.physe.2003.11.054

M3 - Conference article

AN - SCOPUS:1642335137

SN - 1386-9477

VL - 21

SP - 483

EP - 486

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Fabrication of double quantum dots by combining afm and e-beam lithography

Abstract

Keywords

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