Fabrication of coupled quantum dots for multiport access

Alexander W. Holleitner; Robert H. Blick; Karl Eberl

doi:10.1063/1.1563731

Fabrication of coupled quantum dots for multiport access

Alexander W. Holleitner
, Robert H. Blick
, Karl Eberl

Ludwig-Maximilians-Universität München
Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

A verstile two-step electron-beam fabrication technique for defining multiport quantum dots in GaAs/AlGaAs heterostructures were fabricated. It was shown that capacitive coupling of the two quantum dots was directly tuned electrostatically via two central gates. It was found that the conductance measurements gave evidence of both the continuous wide-range tunability of the dots and parallel access to the circuit.

Original language	English
Pages (from-to)	1887-1889
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	12
DOIs	https://doi.org/10.1063/1.1563731
State	Published - 24 Mar 2003
Externally published	Yes

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title = "Fabrication of coupled quantum dots for multiport access",

abstract = "A verstile two-step electron-beam fabrication technique for defining multiport quantum dots in GaAs/AlGaAs heterostructures were fabricated. It was shown that capacitive coupling of the two quantum dots was directly tuned electrostatically via two central gates. It was found that the conductance measurements gave evidence of both the continuous wide-range tunability of the dots and parallel access to the circuit.",

author = "Holleitner, \{Alexander W.\} and Blick, \{Robert H.\} and Karl Eberl",

year = "2003",

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doi = "10.1063/1.1563731",

language = "English",

volume = "82",

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journal = "Applied Physics Letters",

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T1 - Fabrication of coupled quantum dots for multiport access

AU - Holleitner, Alexander W.

AU - Blick, Robert H.

AU - Eberl, Karl

PY - 2003/3/24

Y1 - 2003/3/24

N2 - A verstile two-step electron-beam fabrication technique for defining multiport quantum dots in GaAs/AlGaAs heterostructures were fabricated. It was shown that capacitive coupling of the two quantum dots was directly tuned electrostatically via two central gates. It was found that the conductance measurements gave evidence of both the continuous wide-range tunability of the dots and parallel access to the circuit.

AB - A verstile two-step electron-beam fabrication technique for defining multiport quantum dots in GaAs/AlGaAs heterostructures were fabricated. It was shown that capacitive coupling of the two quantum dots was directly tuned electrostatically via two central gates. It was found that the conductance measurements gave evidence of both the continuous wide-range tunability of the dots and parallel access to the circuit.

UR - https://www.scopus.com/pages/publications/0037464249

U2 - 10.1063/1.1563731

DO - 10.1063/1.1563731

M3 - Article

AN - SCOPUS:0037464249

SN - 0003-6951

VL - 82

SP - 1887

EP - 1889

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Fabrication of coupled quantum dots for multiport access

Abstract

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