Abstract
We investigate two different techniques for fabrication of nanometer structures in the Si/SiGe system. The additive approach is based on local molecular-beam-epitaxy growth through microshadow masks with lateral dimensions down to 200 nm. Mesas of high crystalline quality are achieved because of the fact that the mesas are not in touch with the surrounding mask material. We observe clear exitonic emission from the SiGe wires. The subtractive technique combines high-resolution electron-beam lithography with reactive-ion-etching pattern transfer. Our anisotropic process is based on SF6/O2-plasma etching at a reduced substrate temperature of -20°C. We fabricate structures with lateral widths from 4 μm down to 50 nm. Photoluminescence is detected for structures as small as 400 nm.
Original language | English |
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Pages (from-to) | 83-86 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 27 |
Issue number | 1-4 |
DOIs | |
State | Published - Feb 1995 |