Extraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devices

M. Becherer; G. Csaba; R. Emling; P. Osswald; W. Porod; P. Lugli; D. Schmitt-Landsiedel

doi:10.1109/INEC.2008.4585662

Extraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devices

M. Becherer, G. Csaba, R. Emling, P. Osswald, W. Porod, P. Lugli, D. Schmitt-Landsiedel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

This work demonstrates a novel extraordinary Hall-effect sensor which is designed to probe the magnetization state of micron-scale Co/Pt dots. The applied split-current geometry is well-suited for the electrical readout of field-coupled computing structures realized by focused ion (FIB) techniques. The electrically measured hysteresis loop is in good agreement with SQUID measured hysteresis curves of identical layer stacks. Full reversal in a perpendicular field causes an approximately 0.1 percent change in the Hall-resistivity of the film. We argue that this sensor is scalable all the way down to probe single domain Co/Pt dots with lateral dimensions of 200 nm·200 nm.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	1043-1046
Number of pages	4
DOIs	https://doi.org/10.1109/INEC.2008.4585662
State	Published - 2008
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: 24 Mar 2008 → 27 Mar 2008

Publication series

Name	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/Territory	China
City	Shanghai
Period	24/03/08 → 27/03/08

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10.1109/INEC.2008.4585662

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Becherer, M., Csaba, G., Emling, R., Osswald, P., Porod, W., Lugli, P., & Schmitt-Landsiedel, D. (2008). Extraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devices. In 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 (pp. 1043-1046). Article 4585662 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008). https://doi.org/10.1109/INEC.2008.4585662

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title = "Extraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devices",

abstract = "This work demonstrates a novel extraordinary Hall-effect sensor which is designed to probe the magnetization state of micron-scale Co/Pt dots. The applied split-current geometry is well-suited for the electrical readout of field-coupled computing structures realized by focused ion (FIB) techniques. The electrically measured hysteresis loop is in good agreement with SQUID measured hysteresis curves of identical layer stacks. Full reversal in a perpendicular field causes an approximately 0.1 percent change in the Hall-resistivity of the film. We argue that this sensor is scalable all the way down to probe single domain Co/Pt dots with lateral dimensions of 200 nm·200 nm.",

author = "M. Becherer and G. Csaba and R. Emling and P. Osswald and W. Porod and P. Lugli and D. Schmitt-Landsiedel",

year = "2008",

doi = "10.1109/INEC.2008.4585662",

language = "English",

isbn = "9781424415731",

series = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

pages = "1043--1046",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

note = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 ; Conference date: 24-03-2008 Through 27-03-2008",

}

Becherer, M, Csaba, G, Emling, R, Osswald, P, Porod, W, Lugli, P & Schmitt-Landsiedel, D 2008, Extraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devices. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585662, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, pp. 1043-1046, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 24/03/08. https://doi.org/10.1109/INEC.2008.4585662

Extraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devices. / Becherer, M.; Csaba, G.; Emling, R. et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 1043-1046 4585662 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Csaba, G.

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AU - Lugli, P.

AU - Schmitt-Landsiedel, D.

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N2 - This work demonstrates a novel extraordinary Hall-effect sensor which is designed to probe the magnetization state of micron-scale Co/Pt dots. The applied split-current geometry is well-suited for the electrical readout of field-coupled computing structures realized by focused ion (FIB) techniques. The electrically measured hysteresis loop is in good agreement with SQUID measured hysteresis curves of identical layer stacks. Full reversal in a perpendicular field causes an approximately 0.1 percent change in the Hall-resistivity of the film. We argue that this sensor is scalable all the way down to probe single domain Co/Pt dots with lateral dimensions of 200 nm·200 nm.

AB - This work demonstrates a novel extraordinary Hall-effect sensor which is designed to probe the magnetization state of micron-scale Co/Pt dots. The applied split-current geometry is well-suited for the electrical readout of field-coupled computing structures realized by focused ion (FIB) techniques. The electrically measured hysteresis loop is in good agreement with SQUID measured hysteresis curves of identical layer stacks. Full reversal in a perpendicular field causes an approximately 0.1 percent change in the Hall-resistivity of the film. We argue that this sensor is scalable all the way down to probe single domain Co/Pt dots with lateral dimensions of 200 nm·200 nm.

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Becherer M, Csaba G, Emling R, Osswald P, Porod W, Lugli P et al. Extraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devices. In 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 1043-1046. 4585662. (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008). doi: 10.1109/INEC.2008.4585662

Extraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devices

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