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Extensions to Extended Tight-Binding Methods for Transition-Metal Containing Systems

  • Technical University of Munich
  • University of California

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Semi-empirical quantum-chemical methods such as extended tight-binding (xTB) models are widely used for large-scale simulations. Despite their popularity, their accuracy for transition-metal containing systems is lower than, for example, closed-shell organic molecules. In this work, we extend the Q-Chem-xTB framework with a geometric direct minimization (GDM) scheme for robust self-consistent convergence and Hubbard correction (+ (Formula presented.)) to improve the description of local interactions and reduce self-interaction errors similar to those characteristic of density-functional theory calculations for transition-metal complexes. The Hubbard correction term is integrated self-consistently within the xTB Hamiltonian, allowing shell-specific (Formula presented.) values for each atom. The performance of Q-Chem-xTB+ (Formula presented.) is assessed for four benchmark sets of iron complexes, focusing on their spin-state energetics. Sensitivity and optimization analyses of the spin parameters show that parameter tuning alone cannot systematically reduce the error or consistently recover correct spin ground-state predictions across different datasets. In contrast, introducing the + (Formula presented.) correction yields significant error reduction and improved electronic linearity with respect to fractional occupation, demonstrating that the correction fulfills its intended role of reducing self-interaction error. However, the optimized (Formula presented.) values remain system-dependent, and the resulting improvements are only partially transferable. As a side effect, the + (Formula presented.) correction stabilizes the self-consistent field optimization by widening the HOMO–LUMO gap, thereby overcoming convergence instabilities of the conventional direct inversion of the iterative subspace (DIIS) scheme at low electronic temperatures.

Original languageEnglish
Article numbere70346
JournalJournal of Computational Chemistry
Volume47
Issue number7
DOIs
StatePublished - 15 Mar 2026

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