Extending lasing wavelength on InP with GaAsSb/GaInAs type-II active regions

Stephan Sprengel, Kristijonas Vizbaras, Alexander Andrejew, Tobias Gruendl, Kathrin Geiger, Gerhard Boehm, Christian Grasse, Markus Christian Amann

Research output: Contribution to journalConference articlepeer-review


We present a new concept for type-II lasers on InP, utilizing W-shaped GaAsSb/GaInAs active regions. First lasers demonstrate emission at 2.55μm up to 42°C in pulsed mode and continuous operation at 2.31μm up to 0°C.

Original languageEnglish
Article number6348308
Pages (from-to)22-23
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
StatePublished - 2012
Event23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States
Duration: 7 Oct 201210 Oct 2012


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