TY - JOUR
T1 - Extending lasing wavelength on InP with GaAsSb/GaInAs type-II active regions
AU - Sprengel, Stephan
AU - Vizbaras, Kristijonas
AU - Andrejew, Alexander
AU - Gruendl, Tobias
AU - Geiger, Kathrin
AU - Boehm, Gerhard
AU - Grasse, Christian
AU - Amann, Markus Christian
PY - 2012
Y1 - 2012
N2 - We present a new concept for type-II lasers on InP, utilizing W-shaped GaAsSb/GaInAs active regions. First lasers demonstrate emission at 2.55μm up to 42°C in pulsed mode and continuous operation at 2.31μm up to 0°C.
AB - We present a new concept for type-II lasers on InP, utilizing W-shaped GaAsSb/GaInAs active regions. First lasers demonstrate emission at 2.55μm up to 42°C in pulsed mode and continuous operation at 2.31μm up to 0°C.
UR - http://www.scopus.com/inward/record.url?scp=84870609649&partnerID=8YFLogxK
U2 - 10.1109/ISLC.2012.6348308
DO - 10.1109/ISLC.2012.6348308
M3 - Conference article
AN - SCOPUS:84870609649
SN - 0899-9406
SP - 22
EP - 23
JO - Conference Digest - IEEE International Semiconductor Laser Conference
JF - Conference Digest - IEEE International Semiconductor Laser Conference
M1 - 6348308
T2 - 23rd IEEE International Semiconductor Laser Conference, ISLC 2012
Y2 - 7 October 2012 through 10 October 2012
ER -