Abstract
We present an extended mobility model that accounts for anisotropic current transport along non-equivalent crystallographic axes for a given wafer orientation. Using this model we investigated the influence of anisotropic effects on the device characteristics of 4H- and 6H-SiC transistor structures (JFET, UMOS, DIMOS). Dependent on the polytype of the underlying material and the device structure, large variations in the device behavior may result from anisotropic mobility. This influence is strongest in the 6H-SiC DIMOS.
Original language | English |
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Pages | 169-171 |
Number of pages | 3 |
State | Published - 1997 |
Event | Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, MA, USA Duration: 8 Sep 1997 → 10 Sep 1997 |
Conference
Conference | Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 |
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City | Cambridge, MA, USA |
Period | 8/09/97 → 10/09/97 |