Extended anisotropic mobility model applied to 4H/6H-SiC devices

M. Lades, G. Wachutka

Research output: Contribution to conferencePaperpeer-review

16 Scopus citations

Abstract

We present an extended mobility model that accounts for anisotropic current transport along non-equivalent crystallographic axes for a given wafer orientation. Using this model we investigated the influence of anisotropic effects on the device characteristics of 4H- and 6H-SiC transistor structures (JFET, UMOS, DIMOS). Dependent on the polytype of the underlying material and the device structure, large variations in the device behavior may result from anisotropic mobility. This influence is strongest in the 6H-SiC DIMOS.

Original languageEnglish
Pages169-171
Number of pages3
StatePublished - 1997
EventProceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, MA, USA
Duration: 8 Sep 199710 Sep 1997

Conference

ConferenceProceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97
CityCambridge, MA, USA
Period8/09/9710/09/97

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