TY - JOUR
T1 - Exploring the potential of MnX (S, Sb) monolayers for antiferromagnetic spintronics
T2 - A theoretical investigation
AU - Abdullahi, Yusuf Zuntu
AU - Ersan, Fatih
AU - Vatansever, Zeynep Demir
AU - Aktürk, Ethem
AU - Aktürk, Olcay Üzengi
N1 - Publisher Copyright:
© 2020 Author(s).
PY - 2020/9/21
Y1 - 2020/9/21
N2 - In this study, we predicted new two-dimensional tetragonal structures of t- M n 2 X 2 (X = S, Sb) sheets on the basis of first-principles plane wave calculations within density functional theory with Hubbard U model. Stability tests such as phonon spectrum calculation and molecular dynamic simulations reveal that the 2D t- M n 2 X 2 structures are dynamically and thermally stable at least in room temperature. Our theoretical calculations have shown that t- M n 2 X 2 structures have two Raman active and seven infrared active modes. The t- M n 2 S b 2 sheet exhibits metallic property, whereas t- M n 2 S 2 shows semiconducting property with a 0.68 eV indirect bandgap. Exploring of the favorable magnetic orientation calculations revealed that both 2D t- M n 2 X 2 structures prefer antiferromagnetic spin configuration. Estimated critical temperatures for the phase transition from antiferromagnetic spin order to paramagnetic case are 720 K and 545 K for t- M n 2 S 2 and t- M n 2 S b 2, respectively. These relatively high Néel temperatures and their suitable electronic properties for many applications clearly qualify that the 2D t- M n 2 X 2 sheets can be a good candidate for room temperature antiferromagnetic device applications.
AB - In this study, we predicted new two-dimensional tetragonal structures of t- M n 2 X 2 (X = S, Sb) sheets on the basis of first-principles plane wave calculations within density functional theory with Hubbard U model. Stability tests such as phonon spectrum calculation and molecular dynamic simulations reveal that the 2D t- M n 2 X 2 structures are dynamically and thermally stable at least in room temperature. Our theoretical calculations have shown that t- M n 2 X 2 structures have two Raman active and seven infrared active modes. The t- M n 2 S b 2 sheet exhibits metallic property, whereas t- M n 2 S 2 shows semiconducting property with a 0.68 eV indirect bandgap. Exploring of the favorable magnetic orientation calculations revealed that both 2D t- M n 2 X 2 structures prefer antiferromagnetic spin configuration. Estimated critical temperatures for the phase transition from antiferromagnetic spin order to paramagnetic case are 720 K and 545 K for t- M n 2 S 2 and t- M n 2 S b 2, respectively. These relatively high Néel temperatures and their suitable electronic properties for many applications clearly qualify that the 2D t- M n 2 X 2 sheets can be a good candidate for room temperature antiferromagnetic device applications.
UR - http://www.scopus.com/inward/record.url?scp=85092647076&partnerID=8YFLogxK
U2 - 10.1063/5.0009558
DO - 10.1063/5.0009558
M3 - Article
AN - SCOPUS:85092647076
SN - 0021-8979
VL - 128
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
M1 - 113903
ER -