Explanation and quantitative model for the matching behavior of poly-silicon resistors

Roland Thewes; Ralf Brederlow; Claus Dahl; Ute Kollmer; Carsten G. Linnenbank; Birgit Holzapfl; Jan Becker; Jens Kissing; Sylvia Kessel; Werner Weber

Explanation and quantitative model for the matching behavior of poly-silicon resistors

Roland Thewes, Ralf Brederlow, Claus Dahl, Ute Kollmer, Carsten G. Linnenbank, Birgit Holzapfl, Jan Becker, Jens Kissing, Sylvia Kessel, Werner Weber

Siemens AG

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

We investigate the matching behavior of poly-silicon resistors. Experimental results from an analog CMOS process with three poly-silicon options are discussed and compared with a quantitative model which is developed using fit parameter-free analytical calculations and Monte-Carlo simulations. It is found that mismatch is directly proportional to the grain size. A relation is derived that allows to optimize devices for low mismatch circuit applications.

Original language	English
Pages (from-to)	771-774
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 6 Dec 1998 → 9 Dec 1998

Cite this

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title = "Explanation and quantitative model for the matching behavior of poly-silicon resistors",

abstract = "We investigate the matching behavior of poly-silicon resistors. Experimental results from an analog CMOS process with three poly-silicon options are discussed and compared with a quantitative model which is developed using fit parameter-free analytical calculations and Monte-Carlo simulations. It is found that mismatch is directly proportional to the grain size. A relation is derived that allows to optimize devices for low mismatch circuit applications.",

author = "Roland Thewes and Ralf Brederlow and Claus Dahl and Ute Kollmer and Linnenbank, {Carsten G.} and Birgit Holzapfl and Jan Becker and Jens Kissing and Sylvia Kessel and Werner Weber",

year = "1998",

language = "English",

pages = "771--774",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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TY - JOUR

T1 - Explanation and quantitative model for the matching behavior of poly-silicon resistors

AU - Thewes, Roland

AU - Brederlow, Ralf

AU - Dahl, Claus

AU - Kollmer, Ute

AU - Linnenbank, Carsten G.

AU - Holzapfl, Birgit

AU - Becker, Jan

AU - Kissing, Jens

AU - Kessel, Sylvia

AU - Weber, Werner

PY - 1998

Y1 - 1998

N2 - We investigate the matching behavior of poly-silicon resistors. Experimental results from an analog CMOS process with three poly-silicon options are discussed and compared with a quantitative model which is developed using fit parameter-free analytical calculations and Monte-Carlo simulations. It is found that mismatch is directly proportional to the grain size. A relation is derived that allows to optimize devices for low mismatch circuit applications.

AB - We investigate the matching behavior of poly-silicon resistors. Experimental results from an analog CMOS process with three poly-silicon options are discussed and compared with a quantitative model which is developed using fit parameter-free analytical calculations and Monte-Carlo simulations. It is found that mismatch is directly proportional to the grain size. A relation is derived that allows to optimize devices for low mismatch circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0032272383&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032272383

SN - 0163-1918

SP - 771

EP - 774

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Explanation and quantitative model for the matching behavior of poly-silicon resistors

Abstract

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