Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers

A. P. Bogatov; A. E. Boltaseva; A. E. Drakin; M. A. Belkin; V. P. Konyaev

Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers

A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, M. A. Belkin, V. P. Konyaev

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Abstract

A technique to experimentally determine the amplitude-phase coupling factor (α-factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5×10¹⁸ to 6×10¹⁸ cm^-3. It is shown that the α-factor for such structures at the maximum of mode gain lies in a range of 2-9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser.

Original language	English
Pages (from-to)	320
Number of pages	1
Journal	Kvantovaya Elektronika
Volume	30
Issue number	4
State	Published - 2000

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title = "Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers",

abstract = "A technique to experimentally determine the amplitude-phase coupling factor (α-factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5×1018 to 6×1018 cm-3. It is shown that the α-factor for such structures at the maximum of mode gain lies in a range of 2-9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser.",

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journal = "Kvantovaya Elektronika",

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T1 - Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers

AU - Bogatov, A. P.

AU - Boltaseva, A. E.

AU - Drakin, A. E.

AU - Belkin, M. A.

AU - Konyaev, V. P.

PY - 2000

Y1 - 2000

N2 - A technique to experimentally determine the amplitude-phase coupling factor (α-factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5×1018 to 6×1018 cm-3. It is shown that the α-factor for such structures at the maximum of mode gain lies in a range of 2-9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser.

AB - A technique to experimentally determine the amplitude-phase coupling factor (α-factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5×1018 to 6×1018 cm-3. It is shown that the α-factor for such structures at the maximum of mode gain lies in a range of 2-9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser.

UR - http://www.scopus.com/inward/record.url?scp=33748028269&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33748028269

SN - 0368-7147

VL - 30

SP - 320

JO - Kvantovaya Elektronika

JF - Kvantovaya Elektronika

IS - 4

ER -

Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers

Abstract

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