Abstract
A technique to determine experimentally the amplitude - phase coupling factor (α factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5 × 1018 to 6 × 1018 cm-3. It is shown that the α factor for such structures at the maximum of mode gain lies in the range 2-9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser.
Original language | English |
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Pages (from-to) | 315-320 |
Number of pages | 6 |
Journal | Quantum Electronics |
Volume | 30 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2000 |
Externally published | Yes |