Abstract
Zone-center-zone-boundary ((Formula presented)) intervalley transfer mechanisms in AlAs/GaAs heterostructures are deduced in an unambiguous way from transport and electroluminescence studies of single-AlAs-barrier diodes. We demonstrate that the tunneling is strongly sequential and depends on the nature of the (Formula presented) state involved. For (Formula presented) the transfer is mainly elastic, whereas momentum conserving phonon assistance is dominant for (Formula presented). Quantitative values for the scattering rates for each transfer mechanism are obtained. The conduction-band offset from the (Formula presented) minimum in GaAs to the (Formula presented) minimum in AlAs is shown to be only 120±6 meV.
| Original language | English |
|---|---|
| Pages (from-to) | R8329-R8332 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 54 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1996 |
| Externally published | Yes |