Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC

W. Kaindl; M. Lades; N. Kaminski; E. Niemann; G. Wachutka

doi:10.1007/s11664-999-0006-1

Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC

W. Kaindl
, M. Lades
, N. Kaminski
, E. Niemann
, G. Wachutka

Computation, Information and Technology

Daimler-Benz AG
ABB

Research output: Contribution to journal › Conference article › peer-review

34 Scopus citations

Abstract

In order to measure the ionization time constants of dopants in 4H/6H-SiC within a wide range of temperature, nitrogen (N), aluminum (Al), and boron (B) have been characterized using thermal admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS). The temperature extrapolation of the results obtained by AS shows excellent agreement with those obtained by DLTS, yielding the base for an evaluation of incomplete ionization effects in SiC devices within usual operation ranges. The measured data has been analyzed using numerical drift-diffusion simulations based on the method of finite-elements. A numerical investigation of the different freeze-out characteristics of free carriers in p⁺n, n⁺p, and Schottky diodes shows that unlike in the case of B, the ionization time constant of Al can be exclusively measured in the highly doped region of a p⁺n diode.

Original language	English
Pages (from-to)	154-160
Number of pages	7
Journal	Journal of Electronic Materials
Volume	28
Issue number	3
DOIs	https://doi.org/10.1007/s11664-999-0006-1
State	Published - Mar 1999
Event	Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA Duration: 24 Jun 1998 → 26 Jun 1998

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title = "Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC",

abstract = "In order to measure the ionization time constants of dopants in 4H/6H-SiC within a wide range of temperature, nitrogen (N), aluminum (Al), and boron (B) have been characterized using thermal admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS). The temperature extrapolation of the results obtained by AS shows excellent agreement with those obtained by DLTS, yielding the base for an evaluation of incomplete ionization effects in SiC devices within usual operation ranges. The measured data has been analyzed using numerical drift-diffusion simulations based on the method of finite-elements. A numerical investigation of the different freeze-out characteristics of free carriers in p+n, n+p, and Schottky diodes shows that unlike in the case of B, the ionization time constant of Al can be exclusively measured in the highly doped region of a p+n diode.",

author = "W. Kaindl and M. Lades and N. Kaminski and E. Niemann and G. Wachutka",

year = "1999",

month = mar,

doi = "10.1007/s11664-999-0006-1",

language = "English",

volume = "28",

pages = "154--160",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

note = "Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 ; Conference date: 24-06-1998 Through 26-06-1998",

}

TY - JOUR

T1 - Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC

AU - Kaindl, W.

AU - Lades, M.

AU - Kaminski, N.

AU - Niemann, E.

AU - Wachutka, G.

PY - 1999/3

Y1 - 1999/3

N2 - In order to measure the ionization time constants of dopants in 4H/6H-SiC within a wide range of temperature, nitrogen (N), aluminum (Al), and boron (B) have been characterized using thermal admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS). The temperature extrapolation of the results obtained by AS shows excellent agreement with those obtained by DLTS, yielding the base for an evaluation of incomplete ionization effects in SiC devices within usual operation ranges. The measured data has been analyzed using numerical drift-diffusion simulations based on the method of finite-elements. A numerical investigation of the different freeze-out characteristics of free carriers in p+n, n+p, and Schottky diodes shows that unlike in the case of B, the ionization time constant of Al can be exclusively measured in the highly doped region of a p+n diode.

AB - In order to measure the ionization time constants of dopants in 4H/6H-SiC within a wide range of temperature, nitrogen (N), aluminum (Al), and boron (B) have been characterized using thermal admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS). The temperature extrapolation of the results obtained by AS shows excellent agreement with those obtained by DLTS, yielding the base for an evaluation of incomplete ionization effects in SiC devices within usual operation ranges. The measured data has been analyzed using numerical drift-diffusion simulations based on the method of finite-elements. A numerical investigation of the different freeze-out characteristics of free carriers in p+n, n+p, and Schottky diodes shows that unlike in the case of B, the ionization time constant of Al can be exclusively measured in the highly doped region of a p+n diode.

UR - https://www.scopus.com/pages/publications/0032657710

U2 - 10.1007/s11664-999-0006-1

DO - 10.1007/s11664-999-0006-1

M3 - Conference article

AN - SCOPUS:0032657710

SN - 0361-5235

VL - 28

SP - 154

EP - 160

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

T2 - Proceedings of the 1998 40th Electronic Materials Conference, EMC-98

Y2 - 24 June 1998 through 26 June 1998

ER -

Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC

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