Excitonic transitions in homoepitaxial GaN

G. Martínez-Criado; C. R. Miskys; A. Cros; A. Cantarero; O. Ambacher; M. Stutzmann

doi:10.1002/1521-3951(200111)228:2<497::AID-PSSB497>3.0.CO;2-R

Excitonic transitions in homoepitaxial GaN

G. Martínez-Criado
, C. R. Miskys
, A. Cros
, A. Cantarero
, O. Ambacher
, M. Stutzmann

TUM Emeriti of Excellence

University of Valencia
Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.

Original language	English
Pages (from-to)	497-500
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	228
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(200111)228:2<497::AID-PSSB497>3.0.CO;2-R
State	Published - Nov 2001

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title = "Excitonic transitions in homoepitaxial GaN",

abstract = "The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.",

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T1 - Excitonic transitions in homoepitaxial GaN

AU - Martínez-Criado, G.

AU - Miskys, C. R.

AU - Cros, A.

AU - Cantarero, A.

AU - Ambacher, O.

AU - Stutzmann, M.

PY - 2001/11

Y1 - 2001/11

N2 - The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.

AB - The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.

UR - https://www.scopus.com/pages/publications/0035620302

U2 - 10.1002/1521-3951(200111)228:2<497::AID-PSSB497>3.0.CO;2-R

DO - 10.1002/1521-3951(200111)228:2<497::AID-PSSB497>3.0.CO;2-R

M3 - Article

AN - SCOPUS:0035620302

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VL - 228

SP - 497

EP - 500

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 2

ER -

Excitonic transitions in homoepitaxial GaN

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