Abstract
Experimental evidence for the existence of excitonic states in hydrogenated amorphous silicon is reviewed. It is shown that weakly coupled electron-hole pairs can be observed in spin-dependent recombination experiments up to room temperature. Details of the electron-hole interaction are discussed, and the role of excitonic states in the light-induced creation of metastable defects in amorphous silicon is examined.
| Original language | English |
|---|---|
| Pages (from-to) | 97-105 |
| Number of pages | 9 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 141 |
| Issue number | C |
| DOIs | |
| State | Published - 1992 |
| Externally published | Yes |