Excitonic states in hydrogenated amorphous silicon

M. Stutzmann, M. S. Brandt

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Experimental evidence for the existence of excitonic states in hydrogenated amorphous silicon is reviewed. It is shown that weakly coupled electron-hole pairs can be observed in spin-dependent recombination experiments up to room temperature. Details of the electron-hole interaction are discussed, and the role of excitonic states in the light-induced creation of metastable defects in amorphous silicon is examined.

Original languageEnglish
Pages (from-to)97-105
Number of pages9
JournalJournal of Non-Crystalline Solids
Issue numberC
StatePublished - 1992
Externally publishedYes


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