@inproceedings{6499356abbca46a7a5496d75c3fb58e6,
title = "Evaluation of the breakdown behavior of 4h-sic schottky diodes with a p-guardring junction termination",
abstract = "We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination (Fig. 1). The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky contact. Furthermore we examined the influence of the effective surface charge of the p-guardring on the breakdown characteristics. Two different methods for determining the breakdown voltage by device simulation were considered to evaluate their ability of predicting the real reverse behavior. Silicon Carbide, high power electronics, Schottky diode, breakdown behavior, device simulation.",
author = "Felsl, \{H. P.\} and G. Wachutka",
year = "2002",
language = "English",
isbn = "0970827571",
series = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
pages = "568--571",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
note = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 ; Conference date: 21-04-2002 Through 25-04-2002",
}