@inproceedings{ab1ab30fd1cf478d8d2895f3248f09cd,
title = "Evaluation of MOSFET reliability in analog applications",
abstract = "Reliability evaluation of MOS transistors under analog operation requires a specifically adapted approach compared to the one used for digital circuit reliability assurance. The conditions for the occurrence and for the effect of different stress mechanisms in analog applications are considered. The physics behind the behavior of typical analog device parameters after stress and analog lifetime criteria are discussed.",
author = "Roland Thewes and Ralf Brederlow and Christian Schl{\"u}nder and Peter Wieczorek and Benno Ankele and Alfred Hesener and J{\"u}rgen Holz and Sylvia Kessel and Werner Weber",
note = "Publisher Copyright: {\textcopyright} 2001 Non IEEE.; 31st European Solid-State Device Research Conference, ESSDERC 2001 ; Conference date: 11-09-2001 Through 13-09-2001",
year = "2001",
doi = "10.1109/ESSDERC.2001.195207",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "73--80",
editor = "Heiner Ryssel and Gerhard Wachutka and Herbert Grunbacher",
booktitle = "European Solid-State Device Research Conference",
}