Evaluation of MOSFET reliability in analog applications

Roland Thewes, Ralf Brederlow, Christian Schlünder, Peter Wieczorek, Benno Ankele, Alfred Hesener, Jürgen Holz, Sylvia Kessel, Werner Weber

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

Reliability evaluation of MOS transistors under analog operation requires a specifically adapted approach compared to the one used for digital circuit reliability assurance. The conditions for the occurrence and for the effect of different stress mechanisms in analog applications are considered. The physics behind the behavior of typical analog device parameters after stress and analog lifetime criteria are discussed.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsHeiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
PublisherIEEE Computer Society
Pages73-80
Number of pages8
ISBN (Electronic)2914601018
DOIs
StatePublished - 2001
Externally publishedYes
Event31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany
Duration: 11 Sep 200113 Sep 2001

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference31st European Solid-State Device Research Conference, ESSDERC 2001
Country/TerritoryGermany
CityNuremberg
Period11/09/0113/09/01

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