TY - GEN
T1 - Evaluation of MOSFET reliability in analog applications
AU - Thewes, Roland
AU - Brederlow, Ralf
AU - Schlünder, Christian
AU - Wieczorek, Peter
AU - Ankele, Benno
AU - Hesener, Alfred
AU - Holz, Jürgen
AU - Kessel, Sylvia
AU - Weber, Werner
N1 - Publisher Copyright:
© 2001 Non IEEE.
PY - 2001
Y1 - 2001
N2 - Reliability evaluation of MOS transistors under analog operation requires a specifically adapted approach compared to the one used for digital circuit reliability assurance. The conditions for the occurrence and for the effect of different stress mechanisms in analog applications are considered. The physics behind the behavior of typical analog device parameters after stress and analog lifetime criteria are discussed.
AB - Reliability evaluation of MOS transistors under analog operation requires a specifically adapted approach compared to the one used for digital circuit reliability assurance. The conditions for the occurrence and for the effect of different stress mechanisms in analog applications are considered. The physics behind the behavior of typical analog device parameters after stress and analog lifetime criteria are discussed.
UR - http://www.scopus.com/inward/record.url?scp=34547177835&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2001.195207
DO - 10.1109/ESSDERC.2001.195207
M3 - Conference contribution
AN - SCOPUS:34547177835
T3 - European Solid-State Device Research Conference
SP - 73
EP - 80
BT - European Solid-State Device Research Conference
A2 - Ryssel, Heiner
A2 - Wachutka, Gerhard
A2 - Grunbacher, Herbert
PB - IEEE Computer Society
T2 - 31st European Solid-State Device Research Conference, ESSDERC 2001
Y2 - 11 September 2001 through 13 September 2001
ER -