Evaluation of LDMOS Device's Behavior at Cryogenic Temperatures

Mohammad Abu Zahra, Jens Repp, Michael Hartmann, Matthias Brandl, Ralf Brederlow

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Trapped ion quantum computing (TIQC) with its high gate fidelities and coherence times is a leading quantum technology on the quest for a scalable, fault-tolerant quantum computer. Large-scale quantum computers will require cryogenic multiplexing of control signals. In the case of TIQC, these signals may have voltages of tens of volts. Thus, LDMOS devices will be employed in large-scale trapped ion quantum computers. In this publication, the cryogenic behavior of LDMOS is characterized down to a temperature of 4 K. It shows an increase in the threshold voltage and the kink effect for higher drain-source-voltages. For low voltages, another effect appears at cryogenic temperatures. Close to zero drain-source-voltage, a non-linearity drastically reduces the current through the device. This affects the settling time and the integrity of the applied control signals via the quantum computer's multiplexer.

Original languageEnglish
Title of host publication2024 47th International Semiconductor Conference, CAS 2024 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages181-184
Number of pages4
ISBN (Electronic)9798350352078
DOIs
StatePublished - 2024
Event47th International Semiconductor Conference, CAS 2024 - Sinaia, Romania
Duration: 9 Oct 202411 Oct 2024

Publication series

NameProceedings of the International Semiconductor Conference, CAS

Conference

Conference47th International Semiconductor Conference, CAS 2024
Country/TerritoryRomania
CitySinaia
Period9/10/2411/10/24

Keywords

  • LDMOS
  • carrier freeze out
  • cryogenic circuits
  • field assisted ionization
  • trapped ion quantum computer

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