Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2  01)

Sebastian L. Kollmannsberger; Constantin A. Walenta; Andrea Winnerl; Fabian Knoller; Rui N. Pereira; Martin Tschurl; Martin Stutzmann; Ueli Heiz

doi:10.1063/1.4994141

Ethanol surface chemistry on MBE-grown GaN(0001), GaO_x/GaN(0001), and Ga₂O₃(2 01)

Sebastian L. Kollmannsberger, Constantin A. Walenta, Andrea Winnerl, Fabian Knoller, Rui N. Pereira, Martin Tschurl, Martin Stutzmann, Ueli Heiz

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Abstract

In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga₂O₃(201) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.

Original language	English
Article number	124704
Journal	Journal of Chemical Physics
Volume	147
Issue number	12
DOIs	https://doi.org/10.1063/1.4994141
State	Published - 28 Sep 2017

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title = "Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2 01)",

abstract = "In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga2O3(201) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.",

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AU - Kollmannsberger, Sebastian L.

AU - Walenta, Constantin A.

AU - Winnerl, Andrea

AU - Knoller, Fabian

AU - Pereira, Rui N.

AU - Tschurl, Martin

AU - Stutzmann, Martin

AU - Heiz, Ueli

PY - 2017/9/28

Y1 - 2017/9/28

N2 - In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga2O3(201) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.

AB - In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga2O3(201) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.

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Ethanol surface chemistry on MBE-grown GaN(0001), GaO_x/GaN(0001), and Ga₂O₃(2 01)

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