Erratum: Recording of cell action potentials with AIGaN/GaN field-effect transistors (Applied Physics Letters (2005) 86 (033901))

Georg Steinhoff; Barbara Baur; Günter Wrobel; Sven Ingebrandt; Andreas Offenhäusser; Armin Dadgar; Alois Krost; Martin Stutzmann; Martin Eickhoff

doi:10.1063/1.2219129

Erratum: Recording of cell action potentials with AIGaN/GaN field-effect transistors (Applied Physics Letters (2005) 86 (033901))

Georg Steinhoff, Barbara Baur, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Armin Dadgar, Alois Krost, Martin Stutzmann, Martin Eickhoff

TUM Emeriti of Excellence

Research output: Contribution to journal › Comment/debate

2 Scopus citations

Original language	English
Article number	019901
Journal	Applied Physics Letters
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.2219129
State	Published - 2006

Access to Document

10.1063/1.2219129

Cite this

@article{466ed57afbc14a1baf26a78ce008dd12,

title = "Erratum: Recording of cell action potentials with AIGaN/GaN field-effect transistors (Applied Physics Letters (2005) 86 (033901))",

author = "Georg Steinhoff and Barbara Baur and G{\"u}nter Wrobel and Sven Ingebrandt and Andreas Offenh{\"a}usser and Armin Dadgar and Alois Krost and Martin Stutzmann and Martin Eickhoff",

year = "2006",

doi = "10.1063/1.2219129",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Erratum

T2 - Recording of cell action potentials with AIGaN/GaN field-effect transistors (Applied Physics Letters (2005) 86 (033901))

AU - Steinhoff, Georg

AU - Baur, Barbara

AU - Wrobel, Günter

AU - Ingebrandt, Sven

AU - Offenhäusser, Andreas

AU - Dadgar, Armin

AU - Krost, Alois

AU - Stutzmann, Martin

AU - Eickhoff, Martin

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=33745779646&partnerID=8YFLogxK

U2 - 10.1063/1.2219129

DO - 10.1063/1.2219129

M3 - Comment/debate

AN - SCOPUS:33745779646

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 019901

ER -

Erratum: Recording of cell action potentials with AIGaN/GaN field-effect transistors (Applied Physics Letters (2005) 86 (033901))

Access to Document

Other files and links

Cite this