Erratum: Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions (IEEE Trans. Electron Devices (2002) 49 (1588-1596))

Ralf Brederlow; Werner Weber; Doris Schmitt-Landsiedel; Roland Thewes

doi:10.1109/TED.2003.808739

Erratum: Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions (IEEE Trans. Electron Devices (2002) 49 (1588-1596))

Ralf Brederlow, Werner Weber, Doris Schmitt-Landsiedel, Roland Thewes

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	2373
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	12
DOIs	https://doi.org/10.1109/TED.2003.808739
State	Published - Dec 2002

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10.1109/TED.2003.808739

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title = "Erratum: Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions (IEEE Trans. Electron Devices (2002) 49 (1588-1596))",

author = "Ralf Brederlow and Werner Weber and Doris Schmitt-Landsiedel and Roland Thewes",

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Erratum: Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions (IEEE Trans. Electron Devices (2002) 49 (1588-1596)). / Brederlow, Ralf; Weber, Werner; Schmitt-Landsiedel, Doris et al.
In: IEEE Transactions on Electron Devices, Vol. 49, No. 12, 12.2002, p. 2373.

Research output: Contribution to journal › Comment/debate

TY - JOUR

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T2 - Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions (IEEE Trans. Electron Devices (2002) 49 (1588-1596))

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AU - Weber, Werner

AU - Schmitt-Landsiedel, Doris

AU - Thewes, Roland

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M3 - Comment/debate

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SP - 2373

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Erratum: Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions (IEEE Trans. Electron Devices (2002) 49 (1588-1596))

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