Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

E. I. Terukov; O. B. Gusev; O. I. Kon'Kov; Yu K. Undalov; M. Stutzmann; A. Janotta; H. Mell; J. P. Kleider

doi:10.1134/1.1521223

Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

E. I. Terukov
, O. B. Gusev
, O. I. Kon'Kov
, Yu K. Undalov
, M. Stutzmann
, A. Janotta
, H. Mell
, J. P. Kleider

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

Abstract

A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

Original language	English
Pages (from-to)	1240-1243
Number of pages	4
Journal	Semiconductors
Volume	36
Issue number	11
DOIs	https://doi.org/10.1134/1.1521223
State	Published - 1 Nov 2002

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10.1134/1.1521223

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title = "Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures",

abstract = "A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.",

author = "Terukov, \{E. I.\} and Gusev, \{O. B.\} and Kon'Kov, \{O. I.\} and Undalov, \{Yu K.\} and M. Stutzmann and A. Janotta and H. Mell and Kleider, \{J. P.\}",

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language = "English",

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T1 - Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

AU - Terukov, E. I.

AU - Gusev, O. B.

AU - Kon'Kov, O. I.

AU - Undalov, Yu K.

AU - Stutzmann, M.

AU - Janotta, A.

AU - Mell, H.

AU - Kleider, J. P.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

AB - A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

UR - https://www.scopus.com/pages/publications/0036859853

U2 - 10.1134/1.1521223

DO - 10.1134/1.1521223

M3 - Article

AN - SCOPUS:0036859853

SN - 1063-7826

VL - 36

SP - 1240

EP - 1243

JO - Semiconductors

JF - Semiconductors

IS - 11

ER -

Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

Abstract

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