Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

E. I. Terukov; O. B. Gusev; O. I. Kon'Kov; Yu K. Undalov; M. Stutzmann; A. Janotta; H. Mell; J. P. Kleider

doi:10.1134/1.1521223

Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

E. I. Terukov, O. B. Gusev, O. I. Kon'Kov, Yu K. Undalov, M. Stutzmann, A. Janotta, H. Mell, J. P. Kleider

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

Abstract

A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

Original language	English
Pages (from-to)	1240-1243
Number of pages	4
Journal	Semiconductors
Volume	36
Issue number	11
DOIs	https://doi.org/10.1134/1.1521223
State	Published - 1 Nov 2002

Access to Document

10.1134/1.1521223

Cite this

@article{01d5121eda9e47e9837d7101f0dac603,

title = "Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures",

abstract = "A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.",

author = "Terukov, {E. I.} and Gusev, {O. B.} and Kon'Kov, {O. I.} and Undalov, {Yu K.} and M. Stutzmann and A. Janotta and H. Mell and Kleider, {J. P.}",

year = "2002",

month = nov,

day = "1",

doi = "10.1134/1.1521223",

language = "English",

volume = "36",

pages = "1240--1243",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "11",

}

TY - JOUR

T1 - Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

AU - Terukov, E. I.

AU - Gusev, O. B.

AU - Kon'Kov, O. I.

AU - Undalov, Yu K.

AU - Stutzmann, M.

AU - Janotta, A.

AU - Mell, H.

AU - Kleider, J. P.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

AB - A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

UR - http://www.scopus.com/inward/record.url?scp=0036859853&partnerID=8YFLogxK

U2 - 10.1134/1.1521223

DO - 10.1134/1.1521223

M3 - Article

AN - SCOPUS:0036859853

SN - 1063-7826

VL - 36

SP - 1240

EP - 1243

JO - Semiconductors

JF - Semiconductors

IS - 11

ER -

Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this