Erbium doped Si/SiGe waveguide diodes: Optical and electrical characterization

E. Neufeld; A. Luigart; A. Sticht; K. Brunner; G. Abstreiter

doi:10.1557/proc-533-139

Erbium doped Si/SiGe waveguide diodes: Optical and electrical characterization

E. Neufeld, A. Luigart, A. Sticht, K. Brunner, G. Abstreiter

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated erbium- and oxygen-doped Si/SiGe waveguide diodes showing the characteristic 1.54 μm electroluminescence (EL) from incorporated Er³⁺ ions. All samples were grown by molecular beam epitaxy (MBE). The EL from the polished end facet of the waveguide was measured with a confocal microscope revealing a spatially narrow emission. Additional annealing was not necessary to improve the luminescence characteristics. Only a weak temperature dependence is found for the EL intensity between 4 K and room temperature.

Original language	English
Pages (from-to)	139-144
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	533
DOIs	https://doi.org/10.1557/proc-533-139
State	Published - 1998
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: 13 Apr 1998 → 17 Apr 1998

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title = "Erbium doped Si/SiGe waveguide diodes: Optical and electrical characterization",

abstract = "We have fabricated erbium- and oxygen-doped Si/SiGe waveguide diodes showing the characteristic 1.54 μm electroluminescence (EL) from incorporated Er3+ ions. All samples were grown by molecular beam epitaxy (MBE). The EL from the polished end facet of the waveguide was measured with a confocal microscope revealing a spatially narrow emission. Additional annealing was not necessary to improve the luminescence characteristics. Only a weak temperature dependence is found for the EL intensity between 4 K and room temperature.",

author = "E. Neufeld and A. Luigart and A. Sticht and K. Brunner and G. Abstreiter",

year = "1998",

doi = "10.1557/proc-533-139",

language = "English",

volume = "533",

pages = "139--144",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 13-04-1998 Through 17-04-1998",

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T1 - Erbium doped Si/SiGe waveguide diodes

T2 - Proceedings of the 1998 MRS Spring Symposium

AU - Neufeld, E.

AU - Luigart, A.

AU - Sticht, A.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 1998

Y1 - 1998

N2 - We have fabricated erbium- and oxygen-doped Si/SiGe waveguide diodes showing the characteristic 1.54 μm electroluminescence (EL) from incorporated Er3+ ions. All samples were grown by molecular beam epitaxy (MBE). The EL from the polished end facet of the waveguide was measured with a confocal microscope revealing a spatially narrow emission. Additional annealing was not necessary to improve the luminescence characteristics. Only a weak temperature dependence is found for the EL intensity between 4 K and room temperature.

AB - We have fabricated erbium- and oxygen-doped Si/SiGe waveguide diodes showing the characteristic 1.54 μm electroluminescence (EL) from incorporated Er3+ ions. All samples were grown by molecular beam epitaxy (MBE). The EL from the polished end facet of the waveguide was measured with a confocal microscope revealing a spatially narrow emission. Additional annealing was not necessary to improve the luminescence characteristics. Only a weak temperature dependence is found for the EL intensity between 4 K and room temperature.

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U2 - 10.1557/proc-533-139

DO - 10.1557/proc-533-139

M3 - Conference article

AN - SCOPUS:0032304566

SN - 0272-9172

VL - 533

SP - 139

EP - 144

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 13 April 1998 through 17 April 1998

ER -

Erbium doped Si/SiGe waveguide diodes: Optical and electrical characterization

Abstract

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