Erbium doped Si/SiGe waveguide diodes: Optical and electrical characterization

E. Neufeld, A. Luigart, A. Sticht, K. Brunner, G. Abstreiter

Research output: Contribution to journalConference articlepeer-review


We have fabricated erbium- and oxygen-doped Si/SiGe waveguide diodes showing the characteristic 1.54 μm electroluminescence (EL) from incorporated Er3+ ions. All samples were grown by molecular beam epitaxy (MBE). The EL from the polished end facet of the waveguide was measured with a confocal microscope revealing a spatially narrow emission. Additional annealing was not necessary to improve the luminescence characteristics. Only a weak temperature dependence is found for the EL intensity between 4 K and room temperature.

Original languageEnglish
Pages (from-to)139-144
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199817 Apr 1998


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