EQUALLY STRAINED Si/SiGe SUPERLATTICES ON Si SUBSTRATES.

E. Kasper; H. J. Herzog; H. Daembkes; G. Abstreiter

EQUALLY STRAINED Si/SiGe SUPERLATTICES ON Si SUBSTRATES.

E. Kasper, H. J. Herzog, H. Daembkes, G. Abstreiter

AEG

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Abstract

Growth of Si/SiGe superlattices on Si substrates by molecular beam epitaxy (MBE) is described. Strain symmetrization in the superlattice is achieved with an incommensurate SiGe buffer layer. The concept of strain-symmetrization is explained and properties of buffer and strained layer superlattices are investigated. A two-dimensional electron gas with enhanced room temperature mobility and folded phonon modes within the reduced one-dimensional Brillouin zone are observed. An n-channel Si/SiGe MODFET demonstrates the device applications of this material concept.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Publisher	Materials Research Soc
Pages	347-357
Number of pages	11
ISBN (Print)	0931837219
State	Published - 1986
Externally published	Yes

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	56
ISSN (Print)	0272-9172

Cite this

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title = "EQUALLY STRAINED Si/SiGe SUPERLATTICES ON Si SUBSTRATES.",

abstract = "Growth of Si/SiGe superlattices on Si substrates by molecular beam epitaxy (MBE) is described. Strain symmetrization in the superlattice is achieved with an incommensurate SiGe buffer layer. The concept of strain-symmetrization is explained and properties of buffer and strained layer superlattices are investigated. A two-dimensional electron gas with enhanced room temperature mobility and folded phonon modes within the reduced one-dimensional Brillouin zone are observed. An n-channel Si/SiGe MODFET demonstrates the device applications of this material concept.",

author = "E. Kasper and Herzog, {H. J.} and H. Daembkes and G. Abstreiter",

year = "1986",

language = "English",

isbn = "0931837219",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Soc",

pages = "347--357",

booktitle = "Materials Research Society Symposia Proceedings",

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T1 - EQUALLY STRAINED Si/SiGe SUPERLATTICES ON Si SUBSTRATES.

AU - Kasper, E.

AU - Herzog, H. J.

AU - Daembkes, H.

AU - Abstreiter, G.

PY - 1986

Y1 - 1986

N2 - Growth of Si/SiGe superlattices on Si substrates by molecular beam epitaxy (MBE) is described. Strain symmetrization in the superlattice is achieved with an incommensurate SiGe buffer layer. The concept of strain-symmetrization is explained and properties of buffer and strained layer superlattices are investigated. A two-dimensional electron gas with enhanced room temperature mobility and folded phonon modes within the reduced one-dimensional Brillouin zone are observed. An n-channel Si/SiGe MODFET demonstrates the device applications of this material concept.

AB - Growth of Si/SiGe superlattices on Si substrates by molecular beam epitaxy (MBE) is described. Strain symmetrization in the superlattice is achieved with an incommensurate SiGe buffer layer. The concept of strain-symmetrization is explained and properties of buffer and strained layer superlattices are investigated. A two-dimensional electron gas with enhanced room temperature mobility and folded phonon modes within the reduced one-dimensional Brillouin zone are observed. An n-channel Si/SiGe MODFET demonstrates the device applications of this material concept.

UR - http://www.scopus.com/inward/record.url?scp=0022926840&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022926840

SN - 0931837219

T3 - Materials Research Society Symposia Proceedings

SP - 347

EP - 357

BT - Materials Research Society Symposia Proceedings

PB - Materials Research Soc

ER -

EQUALLY STRAINED Si/SiGe SUPERLATTICES ON Si SUBSTRATES.

Abstract

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