Epitaxy, composites and colloids of gallium nitride achieved by transformation of single source precursor

H. Winkler; A. Devi; A. Manz; A. Wohlfart; W. Rogge; R. A. Fischer

doi:10.1002/(SICI)1521-396X(200001)177:1<27::AID-PSSA27>3.0.CO;2-#

Epitaxy, composites and colloids of gallium nitride achieved by transformation of single source precursor

H. Winkler, A. Devi, A. Manz, A. Wohlfart, W. Rogge, R. A. Fischer

Max-Planck-lnstitut für Kohlenforschung

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

In this report we show the possibility of growing thin films of gallium nitride in OMVPE (organometallic vapor phase epitaxy) process with the help of single source precursors. In addition we demonstrate the incorporation of nanoconfined gallium nitride in a porous matrix and the synthesis of free standing colloids of this semiconducting III-V compound. The latter two approaches are also achieved by the conversion of single source precursors.

Original language	English
Pages (from-to)	27-35
Number of pages	9
Journal	Physica Status Solidi (A) Applied Research
Volume	177
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(200001)177:1<27::AID-PSSA27>3.0.CO;2-#
State	Published - Jan 2000
Externally published	Yes
Event	The 216. WE-Heraeus Seminar on Nitrogen in Solids and at Solid Surfaces: Present Status and Future Trends - Ilmenau, Ger Duration: 30 May 1999 → 2 Jun 1999

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10.1002/(SICI)1521-396X(200001)177:1<27::AID-PSSA27>3.0.CO;2-#

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title = "Epitaxy, composites and colloids of gallium nitride achieved by transformation of single source precursor",

abstract = "In this report we show the possibility of growing thin films of gallium nitride in OMVPE (organometallic vapor phase epitaxy) process with the help of single source precursors. In addition we demonstrate the incorporation of nanoconfined gallium nitride in a porous matrix and the synthesis of free standing colloids of this semiconducting III-V compound. The latter two approaches are also achieved by the conversion of single source precursors.",

author = "H. Winkler and A. Devi and A. Manz and A. Wohlfart and W. Rogge and Fischer, {R. A.}",

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T1 - Epitaxy, composites and colloids of gallium nitride achieved by transformation of single source precursor

AU - Winkler, H.

AU - Devi, A.

AU - Manz, A.

AU - Wohlfart, A.

AU - Rogge, W.

AU - Fischer, R. A.

PY - 2000/1

Y1 - 2000/1

N2 - In this report we show the possibility of growing thin films of gallium nitride in OMVPE (organometallic vapor phase epitaxy) process with the help of single source precursors. In addition we demonstrate the incorporation of nanoconfined gallium nitride in a porous matrix and the synthesis of free standing colloids of this semiconducting III-V compound. The latter two approaches are also achieved by the conversion of single source precursors.

AB - In this report we show the possibility of growing thin films of gallium nitride in OMVPE (organometallic vapor phase epitaxy) process with the help of single source precursors. In addition we demonstrate the incorporation of nanoconfined gallium nitride in a porous matrix and the synthesis of free standing colloids of this semiconducting III-V compound. The latter two approaches are also achieved by the conversion of single source precursors.

UR - http://www.scopus.com/inward/record.url?scp=0033903589&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1521-396X(200001)177:1<27::AID-PSSA27>3.0.CO;2-#

DO - 10.1002/(SICI)1521-396X(200001)177:1<27::AID-PSSA27>3.0.CO;2-#

M3 - Conference article

AN - SCOPUS:0033903589

SN - 0031-8965

VL - 177

SP - 27

EP - 35

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

T2 - The 216. WE-Heraeus Seminar on Nitrogen in Solids and at Solid Surfaces: Present Status and Future Trends

Y2 - 30 May 1999 through 2 June 1999

ER -

Epitaxy, composites and colloids of gallium nitride achieved by transformation of single source precursor

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