Epitaxial type-I and type-II InAs-AlAsSb core-shell nanowires on silicon

Fabio Del Giudice, Sergej Fust, Paul Schmiedeke, Johannes Pantle, Markus Döblinger, Akhil Ajay, Steffen Meder, Hubert Riedl, Jonathan J. Finley, Gregor Koblmüller

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Low-bandgap semiconductor nanowires (NWs) attract considerable interest for mid-infrared (MIR) photonics and optoelectronics, where ideal candidate materials require surface-passivated core-shell systems with large tunability in band offset, lineup, and emission wavelength while maintaining close lattice-matching conditions. Here, we propose and demonstrate epitaxial InAs-AlAsSb core-shell NW arrays on silicon (Si) that offer exceptional control over both the internal strain close to lattice-matching as well as band lineups tunable between type-I and type-II, with almost no analogue in the III-V materials family. We develop direct monolithic growth of high-uniformity InAs-AlAsSb NWs with wide tunability in shell composition and employ correlated Raman scattering and micro-photoluminescence spectroscopy to elaborate the interplay among hydrostatic strain, band lineup, and emission energy of the NW core luminescence tuned from ∼0.4 to 0.55 eV. Electronic structure calculations further support the experimentally observed tunability between type-I and type-II band lineups. The Si-integrated InAs-AlAsSb NW materials system holds large prospects not only for on-chip MIR photonics but also for other applications including high-speed transistors and NW-based hot carrier solar cells.

Original languageEnglish
Article number193102
JournalApplied Physics Letters
Issue number19
StatePublished - 8 Nov 2021


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